cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 1 / 9 mtd011n1 0rq8 cyste k product specification n - channel enhancement mode power mosfet mtd011n10rq8 features ? single drive requirement ? low on - resistance ? fast switching characteristic ? repetitive avalanche rated ? pb - free & halogen - free package s ymbol outline o rdering inf ormation device package shipping mtd011n10rq8 - 0 - t3 - g sop - 8 (rohs compliant & halogen - free package) 25 00 pcs / tape & reel mtd011n10rq8 so p - 8 g gate d drain s source p in 1 bv dss 100v i d @ t a =25 c, v gs =10v 11.5a r ds(on) @v gs =10v, i d =11 .5 a 9.2 m (typ) r ds(on) @v gs =4.5v, i d =9.5a 12.8 m (typ) environment friendly grade : s for rohs compliant products, g f or rohs compliant and green compound products packing spec, t3 : 2500 pcs / tape & reel, 13 reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 2 / 9 mtd011n1 0rq8 cyste k product specification absolute maximum ratings ( t c =25 ? c , unless otherwise noted ) parameter symbol limits unit drain - sour c e voltage v ds 10 0 v gate - source voltage v gs 20 continuous drain current @ t a =25 ? c , v gs =10v i d 11.5 a continuous drain current @ t a =70 ? c , v gs =10v 9.2 pulsed drain current i dm 46 *1 avalanche current i as 11.5 avalanche energy @ l=5mh, i d =11.5a, v dd =50v e as 330 mj repetitive avalanche energy @ l=0.05mh e ar 1.6 *2 total power dissipation t a =25 ? c p d 3.1 w t a =70 ? c 2 operating junction and storage temperature tj, tstg - 55~+1 50 ? c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1% thermal data parameter symbol value unit thermal resistance , junction - to - case r th,j - c 20 ? c /w thermal resistance, junction - to - ambient (note) r th,j - a 40 note : 4 0c / w when mounted on a 1 in 2 pad of 2 oz copper , t 10s; 125 c/w when mounted on minimum pad. characteristics (t c =25 ? symbol min. typ. max. unit test conditions static bv dss 100 - - v v gs = 0 v, i d = 250 a v gs(th) 1. 2 - 2. 6 v ds = v gs , i d = 250 a g fs - 16.8 - s v ds = 10v , i d = 5a i gss - - 100 n a v gs = 20 v i dss - - 1 a v ds = 8 0v, v gs =0 v - - 25 v ds = 80v, v gs =0 v , tj=125 ? c *r ds ( on ) - 9.2 12.5 m v gs = 10v , i d = 11 .5 a - 12.8 17 v gs = 4.5v , i d = 9.5a dynamic qg(v gs =10v) *1, 2 - 54 - nc v ds =50v, v gs =10v, i d =11.5a qg(v gs =4.5v) *1, 2 - 27.5 - qgs *1, 2 - 11 - qgd *1, 2 - 12 - ciss - 2841 - pf v ds =25v, v gs =0v, f=1m hz coss - 313 - crss - 33 -
cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 3 / 9 mtd011n1 0rq8 cyste k product specification characteristics ( cont. t c =25 ? symbol min. typ. max. unit test conditions dynamic t d(on) *1, 2 - 21 - ns v ds =50v, i d =11.5a, v gs =10v, r gs =3 tr *1, 2 - 18.6 - t d(off) *1, 2 - 56 - t f *1, 2 - 7 - source - drain diode ratings and characteristics i s *1 - - 4 a i sm *3 - - 16 v sd *1 - 0.71 1 v i s =1a, v gs =0v trr - 39 - ns i f =4a, di f /dt=100a/ s qrr - 69 - nc note : * 1. pulse test : pulse width ? 3 0 0s, du ty cycle ? 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. recommended soldering footprint
cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 4 / 9 mtd011n1 0rq8 cyste k product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 35 40 45 0 1 2 3 4 5 v ds , drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v v gs =3.5v 4v 4 .5v 5 v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 1 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 0 2 4 6 8 10 i dr , reverse drain current(a) v sd , source-drain voltage(v) tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 0 2 4 6 8 10 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =11.5a drain-source on-state resistance vs junction tempearture 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -75 -50 -25 0 25 50 75 100 125 150 175 200 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =10v, i d =11.5a r ds(on) @tj=25c : 9.2m typ.
cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 5 / 9 mtd011n1 0rq8 cyste k product specification typical characteristics (cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 100 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10v v ds =15v gate charge characteristics 0 2 4 6 8 10 0 10 20 30 40 50 60 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =11.5a v ds =50v maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =40c/w single pulse dc 1s r dson limited 10ms 1ms 100ms 100 s maximum drain current vs junctiontemperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 tj, junctiontemperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =40c/w, single pulse
cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 6 / 9 mtd011n1 0rq8 cyste k product specification typical characteristics (cont.) typical transfer characteristics 0 5 10 15 20 25 30 35 40 45 0 2 4 6 8 10 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse maximum power dissipation 0 50 100 150 200 250 300 350 400 0.001 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j(max) =150c t a =25c r ja =40c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =40c/w
cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 7 / 9 mtd011n1 0rq8 cyste k product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 8 / 9 mtd011n1 0rq8 cyste k product specification r ecommended wave soldering condition product peak temperature soldering time pb - free devices 260 +0/ - 5 ? c 5 +1/ - 1 seconds recommended temperature profile for ir reflow profile feature sn - pb eutectic assembly pb - free assembly average ramp - up rate (tsmax to tp) 3 ? c /second max. 3 ? c /second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 ? c 150 ? c 60 - 120 seconds 150 ? c 200 ? c 60 - 180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 ? c 60 - 150 s econds 217 ? c 60 - 150 seconds peak temperature(t p ) 240 +0/ - 5 ? c 260 +0/ - 5 ? c time within 5 ? c of actual peak temperature(tp) 10 - 30 seconds 20 - 40 seconds ramp down rate 6 ? c /second max. 6 ? c /second max. time 25 ? c to peak temperature 6 minutes max. 8 minu tes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c 169q8 issued date : 20 15 . 11 . 30 revised date : 2016.0 5 . 2 5 page no. : 9 / 9 mtd011n1 0rq8 cyste k product specification so p - 8 dimension dim millimeters inches dim millimeters inches min. max. min. max. min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0. 157 a1 0.1 00 0. 250 0.004 0.010 e1 5.800 6.200 0. 228 0. 244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0. 330 0. 510 0.013 0.020 l 0. 400 1.270 0. 016 0. 0 5 0 c 0. 170 0. 250 0. 006 0. 010 0 8 0 8 d 4.700 5.100 0.185 0.200 notes: 1. controlling dimension: millimeters. 2 . maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, pleas e contact your local cystek sales office. material: ? ? mold compound: epoxy resin family, flammability solid burning class: ul94v - 0 . important notice: ? all rights are reserved. reproduction in whole or in part is prohibited with out the prior written approval of cyste k . ? cyste k reserves the right to make changes to its products without notice. ? cyste k semiconductor products are not warranted to be suitable for use in life - support applications, or systems. ? cyste k assumes no lia bility for any consequence of customer product design, infringement of patents, or application assistance. marking: 8 - lead so p - 8 plastic package cystek package code: q 8 date code device name d011 n10r date code(counting from left to right) : 1 st code: year code, th e last digit of christian year 2 nd code : month code, jan a, feb b, mar c, apr d may e, jun f, jul g, aug h, sep j, oct k, nov l, dec m 3 rd and 4 th codes : prodcution serial number, 01~99
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